SUM90N03-2M2P Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

SUM90N03-2m2P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.6
100
V_GS = 10 V, I_D = 32 A
V_GS = 4.5 V, I_D = 29.8 A
1.4
10
1.2
1
T_J = 150 °C
1.0
0.1
T_J = 25 °C
0.8
0.01
0.6
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.004
0.003
I_D = 32 A
T_A = 125 °C
0.002
0.001
T_A = 25 °C
0.001
0
0.2
0.4
0.6
0.8
1
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temperature
2.8
2.4
I_D = 250 µA
2.0
1.6
1.2
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
r_DS(on) vs. V_GS vs. Temperature
1000
Limited by r_DS(on)*
100
10
1
0.1
0.8
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
100 µs
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
T_A = 25 °C
BVDSS Limited
Single Pulse
0.001
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
*V_GS minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74342
S-71948-Rev. B, 10-Sep-07