SUM90N03-2M2P Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

SUM90N03-2m2P
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
30
V
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_D = 250 µA
35
- 7.5
mV/°C
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
1.5
2.5
V
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
I_D(on)
V_DS ≥ 5 V, V_GS = 10 V
90
1
µA
10
A
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
r_DS(on)
g_fs
V_GS = 10 V, I_D = 32 A
V_GS = 4.5 V, I_D = 29 A
V_DS = 15 V, I_D = 32 A
0.0018 0.0022
Ω
0.0022 0.0027
160
S
Input Capacitance
C_iss
12065
Output Capacitance
C_oss
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
1725
pF
Reverse Transfer Capacitance
C_rss
970
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
V_DS = 15 V, V_GS = 10 V, I_D = 32 A
Q_gs
V_DS = 15 V, V_GS = 4.5 V, I_D = 29 A
Q_gd
171
257
81.5
123
nC
34
29
Gate Resistance
R_g
f = 1 MHz
1.4
2.1
Ω
Turn-On Delay Time
t_d(on)
18
27
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = 15 V, R_L = 0.555 Ω
I_D ≅ 27 A, V_GEN = 10 V, R_g = 1 Ω
11
17
70
105
Fall Time
Turn-On Delay Time
t_f
t_d(on)
10
15
ns
55
83
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = 15 V, R_L = 0.625 Ω
I_D ≅ 24 A, V_GEN = 4.5 V, R_g = 1 Ω
180
270
55
83
Fall Time
t_f
12
18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current^a
I_SM
T_C = 25 °C
90
A
200
Body Diode Voltage
V_SD
I_S = 22 A
0.8
1.2
V
Body Diode Reverse Recovery Time
t_rr
52
78
ns
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Q_rr
t_a
I_F = 20 A, di/dt = 100 A/µs, T_J = 25 °C
t_b
70.2
105
nC
27
ns
25
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74342
S-71948-Rev. B, 10-Sep-07