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| SUM55P06-19L_08 Datasheet, PDF (5/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 °C MOSFET | |||
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THERMAL RATINGS
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Maximum Drain Current
vs. Case Temperature
SUM55P06-19L
Vishay Siliconix
1000
100
Limited by r DS(on)*
10 µs
10
1
TC = 25 °C
Single Pulse
100 µs
1 ms
10 ms
100 ms, DC
0.1
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
Notes:
P DM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 62.5 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73059.
Document Number: 73059
S-80272-Rev. C, 11-Feb-08
www.vishay.com
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