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SUM55P06-19L_08 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
200
200
VGS = 10 thru 6 V
160
160
5V
120
120
4V
80
80
SUM55P06-19L
Vishay Siliconix
TC = - 55 °C
25 °C
125 °C
40
2V
3V
0
0
3
6
9
12
15
VDS - Drain-to-Source Voltage (V)
Output Characteristics
100
80
25 °C
60
TC = - 55 °C
125 °C
40
40
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.05
0.04
0.03
0.02
VGS = 4.5 V
VGS = 10 V
20
0.01
0
0 6 12 18 24 30 36 42 48 54 60
ID - Drain Current (A)
Transconductance
5000
4500
4000
C is s
3500
3000
2500
2000
1500
1000
C os s
Crss
500
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 73059
S-80272-Rev. C, 11-Feb-08
0.00
0
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
20
16
VDS = 30 V
ID = 55 A
12
8
4
0
0 20 40 60 80 100 120 140 160
Qg - Total Gate Charge (nC)
Gate Charge
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