SUM55P06-19L_08 Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 °C MOSFET

SUM55P06-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.2
V_GS = 10 V
1.9
I_D = 30 A
1.6
1.3
1.0
0.7
0.4
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
T_J = 150 °C
10
T_J = 25 °C
1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1000
100
10
I_AV (A) at T_A = 25 °C
1
I_AV (A) at T_A = 150 °C
0.1
0.0001
0.001
0.01
0.1
1
t_in (s)
Avalanche Current vs. Time
75
I_D = 10 mA
72
69
66
63
60
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs.
Junction Temperature
www.vishay.com
4
Document Number: 73059
S-80272-Rev. C, 11-Feb-08