SUM55P06-19L_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 °C MOSFET

SUM55P06-19L
Vishay Siliconix
P-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
- 60
0.019 at V_GS = - 10 V
0.025 at V_GS = - 4.5 V
I_D (A)^d
- 55
- 48
Q_g (Typ.)
76
FEATURES
• TrenchFET^® Power MOSFET
Available
RoHS*
COMPLIANT
TO-263
G DS
Top View
Ordering Information: SUM55P06-19L
SUM55P06-19L-E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^d (T_J = 175 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Avalanche Current
Single Pulse Avalanche Energy^a
I_AS
L = 0.1 mH
E_AS
Power Dissipation
T_C = 25 °C
T_A = 25 °C^b
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Duty cycle ≤ 1%.
b. When Mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
PCB Mount^b
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Symbol
R_thJA
R_thJC
Document Number: 73059
S-80272-Rev. C, 11-Feb-08
Limit
- 60
± 20
- 55
- 31
- 150
- 45
101
125^c
3.75
- 55 to 175
Limit
40
1.2
Unit
V
A
mJ
W
°C
Unit
°C/W
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