SUM55P06-19L Datasheet, PDF (5/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 Degree Celcious MOSFET

THERMAL RATINGS
New Product
SUM55P06-19L
Vishay Siliconix
Maximum Drain Current vs. Case Temperature
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175
T_C − Case Temperature (_C)
1000
100
Safe Operating Area
*Limited by r_DS(on)
10 ms
10
1
T_C = 25_C
Single Pulse
100 ms
1 ms
10 ms
100 ms, dc
0.1
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
2
1 ^{Duty Cycle = 0.5}
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^−4
Normalized Thermal Transient Impedance, Junction-to-Case
10^−3
10^−2
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^−1
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology
and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73059.
Document Number: 73059
S-41778—Rev. B, 04-Oct-04
www.vishay.com
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