SUM55P06-19L Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 Degree Celcious MOSFET

New Product
SUM55P06-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
200
Output Characteristics
200
V_GS = 10 thru 6 V
160
160
5V
120
120
4V
80
80
Transfer Characteristics
T_C = −55_C
25_C
125_C
40
0
0
100
80
60
2V
3V
3
6
9
12
15
V_DS − Drain-to-Source Voltage (V)
Transconductance
T_C = −55_C
25_C
125_C
40
40
0
0
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
20
0.01
0
0
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
6 12 18 24 30 36 42 48 54 60
I_D − Drain Current (A)
Capacitance
C_iss
C_oss
C_rss
10
20
30
40
50
60
V_DS − Drain-to-Source Voltage (V)
0.00
0
20
20
40
60
80
100
I_D − Drain Current (A)
Gate Charge
16
V_DS = 30 V
I_D = 55 A
12
8
4
0
0 20 40 60 80 100 120 140 160
Q_g − Total Gate Charge (nC)
Document Number: 73059
S-41778—Rev. B, 04-Oct-04
www.vishay.com
3