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SUM55P06-19L Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 Degree Celcious MOSFET
New Product
SUM55P06-19L
Vishay Siliconix
P-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.019 @ VGS = −10 V
−60
0.025 @ VGS = −4.5 V
ID (A)d
−55
−48
Qg (Typ)
76
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Automotive Such As
− High-Side Switch
− Motor Drives
− 12-V Boardnet
TO-263
S
G DS
Top View
Ordering Information: SUM55P06-19L
SUM55P06-19L—E3 (Lead (Pb)-Free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currentd
(TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energya
Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_Cb
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
−60
"20
−55
−31
−150
−45
101
125c
3.75
−55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient PCB Mountb
Junction-to-Case
Notes:
a. Duty cycle v 1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
Symbol
RthJA
RthJC
Limit
40
1.2
Unit
V
A
mJ
W
_C
Unit
_C/W
Document Number: 73059
S-41778—Rev. B, 04-Oct-04
www.vishay.com
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