SUM55P06-19L Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) 175 Degree Celcious MOSFET

SUM55P06-19L
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = −250 mA
V_DS = V_GS, I_D = −250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = −60 V, V_GS = 0 V
V_DS = −60 V, V_GS = 0 V, T_J = 125_C
V_DS = −60 V, V_GS = 0 V, T_J = 175_C
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −30 A
V_GS = −10 V, I_D = −30 A, T_J = 125_C
V_GS = −10 V, I_D = −30 A, T_J = 175_C
V_GS = −4.5 V, I_D = −20 A
V_DS = −15 V, I_D = −50 A
−60
V
−1
−3
"100
nA
−1
−50
mA
−250
−120
A
0.015 0.019
0.033
W
0.041
0.020 0.025
20
S
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Gate Resistance
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = −25 V, f = 1 MHz
V_DS = −30 V, V_GS = −10 V, I_D = −55 A
f = 1.0 MHz
V_DD = −30 V, R_L = 0.54 W
I_D ] −55 A, V_GEN = −10 V, R_g = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^b
3500
390
pF
290
76
115
16
nC
19
5.2
W
12
20
15
25
ns
80
120
230
350
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I_s
I_SM
V_SD
t_rr
I_RM(REC)
Q_rr
I_F = −50 A, V_GS = 0 V
I_F = −50 A, di/dt = 100 A/ms
−110
A
−240
−1.0
−1.5
V
45
68
ns
−2.6
4.0
A
0.059 0.136
mC
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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2
Document Number: 73059
S-41778—Rev. B, 04-Oct-04