SUM25P10-138 Datasheet, PDF (5/8 Pages) Vishay Siliconix – P-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUM25P10-138
Vishay Siliconix
20
128
I_D = 250 μA
15
122
10
5
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Current Derating*
116
110
104
98
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.05
Single Pulse, 0.02
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62886.
Document Number: 62886
For technical questions, contact: [e-mail]
www.vishay.com
S13-2076-Rev. A, 30-Sep-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000