SUM25P10-138 Datasheet, PDF (3/8 Pages) Vishay Siliconix – P-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUM25P10-138
Vishay Siliconix
25
1.5
V_GS = 10 V thru 6 V
20
1.2
15
10
5
0
0
0.21
V_GS = 5 V
V_GS = 4 V
1
2
3
4
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.17
0.13
0.09
V_GS = 10 V, 7.5 V
V_GS = 6 V
0.05
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
0.9
T_C = 25 °C
0.6
0.3
0
0
3000
T_C = 125 °C
T_C = - 55 °C
1.5
3
4.5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2400
C_iss
1800
1200
600
C_rss
0
0
C_oss
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 6.7 A
8
V_DS = 25 V
V_DS = 50 V
6
V_DS = 80 V
4
2
0
0
10
20
30
40
Q_g - Total Gate Charge (nC)
Gate Charge
2.5
V_GS = 10 V, 7.5 V, I_D = 6 A
2.1
1.7
V_GS = 6 V, I_D = 6 A
1.3
0.9
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62886
For technical questions, contact: [e-mail]
www.vishay.com
S13-2076-Rev. A, 30-Sep-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000