SUM25P10-138 Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 100 V (D-S) MOSFET

SUM25P10-138
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
- 100
R_DS(on) () Max.
0.138 at V_GS = - 10 V
0.141 at V_GS = - 7.5 V
0.142 at V_GS = - 6 V
TO-263
I_D (A)^c
- 16.3
- 16.1
- 16.1
Q_g (Typ.)
24 nC
Drain connected to Tab
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converters
S
• Motor Control
G
D
G
S
Top View
Ordering Information:
SUM25P10-138-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 100 µs)
Avalanche Current
Single Pulse Avalanche Energy^a
V_DS
V_GS
T_C = 25 °C
T_C = 125 °C
I_D
I_DM
L = 0.1 mH
I_AS
E_AS
Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_A = 25 °C
P_D
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Free Air
Junction-to-Case
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. T_C = 25 °C
Symbol
R_thJA
R_thJC
D
P-Channel MOSFET
Limit
- 100
± 20
- 16.7
- 9.6
- 40
- 25
31.25
88.2^b
3.75
- 55 to 175
Limit
40
1.7
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 62886
For technical questions, contact: [e-mail]
www.vishay.com
S13-2076-Rev. A, 30-Sep-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000