SUM25P10-138 Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 100 V (D-S) MOSFET

SUM25P10-138
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.3
10
T_J = 150 °C
1
T_J = 25 °C
0.24
0.18
0.12
I_D = 6A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.65
I_D = 250 μA
3.3
2.95
2.6
2.25
1.9
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
100
0.06
4.5
5.6
6.7
7.8
8.9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
T_C = 25 °C
T_C = - 55 °C
15
T_C = 125 °C
10
5
0
0
100
2
4
6
8
10
I_D - Drain Current (A)
Transconductance
25 °C
10
150 °C
1
0.000001 0.00001
0.0001
0.001
0.01
Time (s)
Single Pulse Avalanche Capability
10 _{Limited by RDS(on)*}
1
100 μs
1 ms
DC, 10 s 1 s,
100 ms, 10 ms
0.1
T_C = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
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For technical questions, contact: [e-mail]
Document Number: 62886
4
S13-2076-Rev. A, 30-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000