SUM18N25-165_08 Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175 °C MOSFET

THERMAL RATINGS
20
16
12
8
4
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Maximum Drain Current vs. Case Temperature
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.02
0.05
Single Pulse
SUM18N25-165
Vishay Siliconix
100
Limited by r_DS(on)*
10
10 µs
100 µs
1
T_C = 25 °C
Single Pulse
1 ms
10 ms
100 ms, DC
0.1
0.1
* V_GS
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which r_DS(on) is specified
Safe Operating Area
0.01
10-⁴
10-³
10-²
10-¹
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72849.
Document Number: 72849
S-80272-Rev. B, 11-Feb-08
www.vishay.com
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