SUM18N25-165_08 Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175 °C MOSFET

SUM18N25-165
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_DS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 250 V, V_GS = 0 V
V_DS = 250 V, V_GS = 0 V, T_J = 125 °C
V_DS = 250 V, V_GS = 0 V, T_J = 175 °C
V_DS ≥ 15 V, V_GS = 10 V
V_GS = 10 V, I_D = 14 A
V_GS = 10 V, I_D = 14 A, T_J = 125 °C
V_GS = 10 V, I_D = 14 A, T_J = 175 °C
V_DS = 15 V, I_D = 18 A
Input Capacitance
C_iss
Output Capacitance
C_oss
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
V_DS = 125 V, V_GS = 10 V, I_D = 18 A
Gate-Drain Charge^c
Q_gd
Gate Resistance
R_g
Turn-On Delay Time^c
t_d(on)
Rise Time^c
Turn-Off Delay Time^c
t_r
t_d(off)
V_DD = 125 V, R_L = 7.0 Ω
I_D ≅ 18 A, V_GEN = 10 V, R_g = 2.5 Ω
Fall Time^c
t_f
Source-Drain Diode Ratings and Characteristics T_C = 25 °C^b
Continuous Current
I_S
Pulsed Current
I_SM
Forward Voltage^a
V_SD
I_F = 18 A, V_GS = 0 V
Reverse Recovery Time
t_rr
Peak Reverse Recovery Charge
I_RM(REC)
I_F = 18 A, di/dt = 100 A/µs
Reverse Recovery Charge
Q_rr
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
250
2.5
20
Typ.
Max.
4
± 100
1
50
250
0.130
36
0.165
0.347
0.462
1950
160
70
30
45
10
10
1.6
15
25
130
195
30
45
100
150
18
20
1.0
1.5
115
175
10
15
0.58
1.3
Unit
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
A
µC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72849
S-80272-Rev. B, 11-Feb-08