SUM18N25-165_08 Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175 °C MOSFET

SUM18N25-165
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.8
V_GS = 10 V
2.4
I_D = 18 A
2.0
1.6
1.2
0.8
0.4
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
10
I_AV (A) at T_A = 25 °C
1
0.1
I_AV (A) at T_A = 150 °C
0.01
0.000001 0.00001 0.0001 0.001
0.01
0.1
t_in (s)
Avalanche Current vs. Time
100
T_J = 150 °C
10
T_J = 25 °C
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
325
310
I_D = 10 mA
295
280
265
250
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs.
Junction Temperature
www.vishay.com
4
Document Number: 72849
S-80272-Rev. B, 11-Feb-08