SUM18N25-165_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175 °C MOSFET

SUM18N25-165
Vishay Siliconix
N-Channel 250-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
250
r_DS(on) (Ω)
0.165 at V_GS = 10 V
I_D (A)
18
FEATURES
• TrenchFET^® Power MOSFET
• 175 °C Junction Temperature
• Low Thermal Resistance Package
RoHS
COMPLIANT
TO-263
G DS
Top View
Ordering Information: SUM18N25-165-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Single Pulse Avalanche Current
I_AS
Single Pulse Avalanche Energy^a
L = 0.1 mH
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_A = 25 °C^c
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB Mount (TO-263)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 72849
S-80272-Rev. B, 11-Feb-08
Symbol
R_thJA
R_thJC
Limit
Unit
250
V
± 20
18
10.4
A
20
5
1.25
mJ
150^b
W
3.75
- 55 to 175
°C
Limit
40
1.0
Unit
°C/W
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