SUM110P04-05_08 Datasheet, PDF (5/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

SUM110P04-05
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
240
210
180
150
120
90
Package Limited
60
30
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Max. Avalanche and Drain Current
vs. Case Temperature*
1
0.5
400
350
300
250
200
150
100
50
0
25
0.2
0.1
50
75
100 125 150 175
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
* The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73493.
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
www.vishay.com
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