SUM110P04-05_08 Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

SUM110P04-05
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
0.04
T_J = 150 °C
0.03
10
T_J = 25 °C
0.02
T_A = 150 °C
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.1
I_D =10 mA
0.9
0.7
0.5
0.3
0.1
- 0.1
- 0.3
- 0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
1000
Limited by r_DS(on)*
100
0.01
T_A = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
35
30
25
20
15
T_C = 25 °C
10
5
0
0.0001 0.001 0.01 0.1
1.00 10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
10 µs
100 µs
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4
1 ms
10
10 ms
100 ms
DC
Single Pulse
T_C = 25 °C
1
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
*V_GS > minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73493
S-80274-Rev. B, 11-Feb-08