SUM110P04-05_08 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

SUM110P04-05
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
200
40
V_GS = 10 thru 7 V
6V
160
30
120
80
40
0
0.0
5V
4V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
20
25 °C
10
0
0
T_C = 125 °C
1
2
3
- 55 °C
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.010
0.008
0.006
0.004
V_GS = 10 V
0.002
0.000
0
20
40
60
80
100 120
I_D - Drain Current (A)
On-Resistance vs. Drain Current
16000
14000
C_iss
12000
10000
8000
6000
4000
2000
C_oss
0
C_rss
0
10
20
30
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
8
V_DS = 20 V
6
V_DS = 32 V
4
2
1.8
I_D = 20 A
1.5
V_GS = 10 V
1.2
0.9
0
0
40
80
120 160 200 240
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
0.6
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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