SUM110P04-05_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

P-Channel 40-V (D-S) MOSFET
SUM110P04-05
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
- 40
0.005 at V_GS = - 10 V
I_D (A)^a
- 110
Q_g (Typ.)
185 nC
FEATURES
• TrenchFET^® Power MOSFET
TO-263
S
RoHS
COMPLIANT
GDS
Top View
Drain Connected to Tab
Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 40
V
V_GS
± 20
T_C = 25 °C
- 110^a
Continuous Drain Current (T_J = 175 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 110^a
39^{b, c}
Pulsed Drain Current
T_A = 70 °C
33^{b, c}
A
I_DM
240
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
110
10^{b, c}
Avalanche Current
Single-Pulse Avalanche Energy
I_AS
75
L = 0.1 mH
E_AS
281
mJ
T_C = 25 °C
375
Maximum Power Dissipation
T_C = 70 °C
262
T_A = 25 °C
P_D
15^{b, c}
W
T_A = 70 °C
10.5^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 175
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
Symbol
R_thJA
R_thJC
Typical
8
0.33
Maximum
10
0.4
Unit
°C/W
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