SUD50P04-23 Datasheet, PDF (5/8 Pages) Vishay Siliconix – P-Channel 40-V (D-S), 175 °C MOSFET

SUD50P04-23
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
Limited by R_DS(on)*
10
1
T_A = 25 °C
Single Pulse
0.1
1 ms
10 ms
100 ms
1s
10 s
DC
BVDSS
Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Limited by R_DS(on)*
10
1
100 µs
1 ms
10 ms
100 ms
DC
T_C = 25 °C
Single Pulse
0.1
0.01
0.01
0.1
BVDSS
Limited
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
9
35
7
28
5
21
4
14
Package Limited
2
7
0
0
25 50 75 100 125 150 175
T_A - Ambient Temperature (°C)
Current Derating**, Junction-to-Ambient
0
0
25 50 75 100 125 150 175
T_A - Ambient Temperature (°C)
Current Derating**, Junction-to-Case
** The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74423
S-81956-Rev. B, 25-Aug-08
www.vishay.com
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