SUD50P04-23 Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 40-V (D-S), 175 °C MOSFET

SUD50P04-23
Vishay Siliconix
P-Channel 40-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 40
0.023 at V_GS = 10 V
0.030 at V_GS = 4.5 V
I_D (A)^a
- 20
- 20
Q_g (Typ.)
20.6 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• LCD TV Inverter
RoHS
COMPLIANT
TO-252
S
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P04-23-E3 (Lead (Pb)-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 40
V
V_GS
± 16
T_C = 25 °C
- 20^a
Continuous Drain Current (T_J = 150 °C)
T_C = 100 °C
T_A = 25 °C
I_D
- 20^a
- 8.2^b
Pulsed Drain Current
T_A = 100 °C
- 5.7^b
A
I_DM
- 50
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 20^a
- 2.5^b
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
- 20
E_AS
20
mJ
T_C = 25 °C
45.4
Maximum Power Dissipation
T_C = 100 °C
T_A = 25 °C
P_D
22.7
3.1^b
W
T_A = 100 °C
1.5^b
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
40
2.75
Maximum
48
3.3
Unit
°C/W
Document Number: 74423
S-81956-Rev. B, 25-Aug-08
www.vishay.com
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