SUD50P04-23 Datasheet, PDF (3/8 Pages) Vishay Siliconix – P-Channel 40-V (D-S), 175 °C MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
2.0
V_GS = 10 thru 4 V
64
1.6
SUD50P04-23
Vishay Siliconix
48
1.2
32
16
0
0
50
40
3V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
25 °C
T_C = - 55 °C
0.8
T_C = 125 °C
0.4
25 °C
- 55 °C
0.0
0.0
0.6
1.2
1.8
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.05
0.04
30
125 °C
0.03
V_GS = 4.5 V
V_GS = 10 V
20
0.02
10
0.01
0
0
0.20
7
14
21
28
I_D - Drain Current (A)
Transconductance
0.00
0
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current
3000
0.16
0.12
2400
C_iss
1800
0.08
125 °C
0.04
25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 74423
S-81956-Rev. B, 25-Aug-08
1200
600
C_oss
C_rss
0
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
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