SUD50P04-23 Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 40-V (D-S), 175 °C MOSFET

SUD50P04-23
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.1
I_D = 30 A
8
1.8
V_DS = 20 V
6
1.5
V_DS = 10 V
I_D = 15 A
4
1.2
V_DS = 30 V
2
0.9
V_GS = 4.5 V
V_GS = 10 V
0
0
100
10
1
0.1
0.01
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
T_J = 25 °C
0.6
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.7
0.5
I_D = 250 µA
0.3
I_D = 5 mA
0.1
- 0.1
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
200
160
- 0.3
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
200
160
120
120
80
80
40
40
0
0.001 0.01
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Case
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4
Document Number: 74423
S-81956-Rev. B, 25-Aug-08