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SUD50N06-36 Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 150 °C MOSFET
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
7
SUD50N06-36
Vishay Siliconix
Limited by r DS(on)*
10
1
100 µs
1 ms
10 ms
100 ms, 1 s
0.1
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Case
21
6
4
3
1
0
0
25
50
75
100 125 150
TA - Ambient Temperature (°C)
Current Derating*, Junction-to-Ambient
30
17
24
Package Limited
13
18
8
12
4
6
0
0
3.0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*, Junction-to-Case
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power Derating*, Junction-to-Case
2.4
1.8
1.2
0.6
0.0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power Derating*, Junction-to-Ambient
Document Number: 70437
S-72510-Rev. A, 03-Dec-07
* The power dissipation PD is based on TJ(max) = 175 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
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