SUD50N06-36 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 150 °C MOSFET

New Product
SUD50N06-36
Vishay Siliconix
N-Channel 60-V (D-S), 150 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
60
0.036 at V_GS = 10 V
0.042 at V_GS = 4.5 V
I_D (A)^a
12
12
Q_g (Typ)
10.5 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g & UIS Tested
APPLICATIONS
• LCD TV Inverter
• Push Pull Converter
TO-252
D
RoHS
COMPLIANT
Drain Connected to Tab
GDS
Top View
Order Number:
SUD50N06-36-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
T_C = 25 °C
12^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
12^a
5.9^b
Pulsed Drain Current
T_A = 70 °C
4.7^b
A
I_DM
50
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
12^a
2.0^b
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
15
E_AS
11.2
mJ
T_C = 25 °C
24
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
15.3
2.4^b
W
T_A = 70 °C
1.5^b
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Steady State
Steady State
Document Number: 70437
S-72510-Rev. A, 03-Dec-07
Symbol
R_thJA
R_thJC
Typical
43
4.3
Maximum
52
5.2
Unit
°C/W
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