SUD50N06-36 Datasheet, PDF (2/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 150 °C MOSFET

SUD50N06-36
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 1 mA
60
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_D = 250 µA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
1.0
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
V_DS = 60 V, V_GS = 0 V
V_DS = 60 V, V_GS = 0 V, T_J = 70 °C
I_D(on)
V_DS ≥ 5 V, V_GS = 10 V
30
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
r_DS(on)
g_fs
V_GS = 10 V, I_D = 10 A
V_GS = 4.5 V, I_D = 8 A
V_DS = 15 V, I_D = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C_iss
C_oss
C_rss
Q_g
V_DS = 30 V, V_GS = 0 V, f = 1 MHz
V_DS = 30 V, V_GS = 10 V, I_D = 5 A
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Drain-Source Body Diode Characteristics
V_DS = 30 V, V_GS = 4.5 V, I_D = 5 A
f = 1 MHz
V_DD = 30 V, R_L = 1 Ω
I_D ≅ 30 A, V_GEN = 4.5 V, R_g = 1 Ω
V_DD = 30 V, R_L = 1 Ω
I_D ≅ 30 A, V_GEN = 10 V, R_g = 1 Ω
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current^a
I_SM
T_C = 25 °C
Body Diode Voltage
V_SD
I_S = 5.5 A
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Q_rr
t_a
I_F = 5.5 A, di/dt = 100 A/µs, T_J = 25 °C
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Typ
55
- 6.3
0.028
0.033
20
1100
90
55
21
10.5
3.5
4.2
3.3
18
250
35
68
6
9
19
7
0.85
25
25
19
6
Max
3.0
± 100
1
20
0.036
0.042
32
16
6.5
30
400
55
110
12
18
30
14
20
50
1.2
50
50
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70437
S-72510-Rev. A, 03-Dec-07