SUD50N06-36 Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 150 °C MOSFET

SUD50N06-36
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
T_J = 150 °C
1
T_J = 25 °C
0.10
I_D = 10 A
0.08
0.06
0.1
0.04
0.01
0.02
125 °C
25 °C
0.001
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
0.2
64
- 0.1
- 0.4
48
I_D = 5 mA
32
- 0.7
I_D = 250 µA
16
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
80
64
48
32
16
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Case
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4
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by r_DS(on)*
10
1 ms
1
10 ms
100 ms
1s
0.1
10 s
T_A = 25 °C
DC
Single Pulse
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 70437
S-72510-Rev. A, 03-Dec-07