SUD35N10-26P_16 Datasheet, PDF (5/9 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
80
SUD35N10-26P
Vishay Siliconix
30
60
20
40
10
20
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating ^a
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
Note
a. The power dissipation P_D is based on T_J (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-1599-Rev. B, 06-Jul-15
5
Document Number: 69796
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