SUD35N10-26P_16 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

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SUD35N10-26P
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
100
R_DS(on) (Ω)
0.0260 at V_GS = 10 V
0.0375 at V_GS = 7 V
I_D (A) ^a
35
31
Q_g (TYP.)
31 nC
TO-252
Drain connected to tab
FEATURES
• TrenchFET^® power MOSFET
• 100 % UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary side switch
D
S
D
G
Top View
Ordering Information:
SUD35N10-26P-E3 (lead (Pb)-free)
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
100
± 20
35
32
12 ^{b, c}
10 ^{b, c}
40
50 ^e
6.9 ^{b, c}
33
55
83
58
8.3 ^{b, c}
5.8 ^{b, c}
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
Maximum Junction-to-Ambient ^{b, d}
Maximum Junction-to-Case
t ≤ 10 s
R_thJA
15
Steady State
R_thJC
1.5
Notes
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 50 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
MAXIMUM
18
1.8
UNIT
°C/W
S15-1599-Rev. B, 06-Jul-15
1
Document Number: 69796
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000