SUD35N10-26P_16 Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.08
0.06
T_J = 150 °C
10
0.04
T_J = 25 °C
0.02
SUD35N10-26P
Vishay Siliconix
I_D = 12 A
T_A = 125 °C
T_A = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
R_DS(on) vs. V_GS vs. Temperature
4.5
200
4.0
I_D = 250 µA
150
3.5
3.0
100
2.5
50
2.0
1.5
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
10 ms
100 ms
1s
0.1
10 s
T_A = 25 °C
Single Pulse
0.01
BVDSS
DC
Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
S15-1599-Rev. B, 06-Jul-15
4
Document Number: 69796
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