SUD35N10-26P_16 Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
10
V_GS = 10 V thru 7 V
8
30
V_GS = 6 V
6
20
4
10
2
V_GS = 4 V
V_GS = 5 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.023
2500
SUD35N10-26P
Vishay Siliconix
T_C = - 55 °C
T_C = 25 °C
T_C = 125 °C
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.022
0.021
V_GS = 10 V
0.020
0
10
20
30
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
2000
C_iss
1500
1000
500
C_oss
C_rss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 12 A
8
V_DS = 50 V
2.2
I_D = 12 A
2.0
1.8
V_GS = 10 V
1.6
6
V_DS = 80 V
1.4
1.2
4
1.0
2
0.8
0.6
0
0
5
10 15 20 25 30 35
Q_g - Total Gate Charge (nC)
0.4
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-1599-Rev. B, 06-Jul-15
3
Document Number: 69796
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