SUD20N10-66L Datasheet, PDF (5/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
SUD20N10-66L
Vishay Siliconix
T_J = 25 °C
10
T_J = 150 °C
1
0.000001 0.00001
0.0001
0.001
0.01
Time (s)
Single Pulse Avalanche Current Capability vs. Time
2
1 _{Duty Cycle = 0.5}
10 Limited by R_DS(on)*
100 μs
1 ms
1
10 ms
DC, 10 s 1 s, 100 ms
0.1
T_C = 25 °_C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
30
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62815.
Document Number: 62815
For technical questions, contact: [e-mail]
www.vishay.com
S13-0629-Rev. A, 25-Mar-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000