SUD20N10-66L Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUD20N10-66L
Vishay Siliconix
25
20
15
10
5
0
0
V_GS = 10 V thru 7 V
V_GS = 4 V
V_GS = 3 V
0.5
1
1.5
2
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.09
0.08
0.07
0.06
0.05
V_GS =4.5V
V_GS = 10 V
0.04
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
5
4
3
2
1
0
0
40
30
20
10
0
0
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
T_C = - 55 °C
T_C = 25 °C
T_C = 125 °C
3
6
9
12
I_D - Drain Current (A)
Transconductance
0.15
0.12
0.09
I_D = 6.6 A
T_J = 125 °C
0.06
T_J = 25 °C
0.03
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
I_D = 6.6 A
8
V_DS = 50 V
V_DS = 25 V
6
V_DS = 80 V
4
2
0
0
6
12
18
24
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 62815
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www.vishay.com
S13-0629-Rev. A, 25-Mar-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000