SUD20N10-66L Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUD20N10-66L
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
100
R_DS(on) () Max.
0.066 at V_GS = 10 V
0.080 at V_GS = 4.5 V
TO-252
I_D (A)
18.2
13.2
Q_g (Typ.)
19.8
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converters
D
• DC/AC Inverters
• Motor Drives
G
D
S
Top View
Drain Connected to Tab
Ordering Information:
SUD20N10-66L-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t = 300 µs)
Avalanche Current
Single Avalanche Energy^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
L = 0.1 mH
T_C = 25 °C
T_A = 25 °C^c
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_J, T_stg
G
S
N-Channel MOSFET
Limit
Unit
100
V
± 20
16.9
13.6
A
25
15
11.25
mJ
41.7^b
W
2.1
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Base on T_C = 25 °C.
Symbol
R_thJA
R_thJC
Limit
60
3
Unit
°C/W
Document Number: 62815
For technical questions, contact: [e-mail]
www.vishay.com
S13-0629-Rev. A, 25-Mar-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000