SUD20N10-66L Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUD20N10-66L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.7
T_J = 150 °C
2.4
10
2.1
I_D = 250 μA
1.8
1
T_J = 25 °C
1.5
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1250
1000
C_iss
750
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
127
I_D = 250 μA
122
117
500
112
250
C_oss
0 ^Crss
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.25
1.8
V_GS = 10 V, I_D = 6.6 A
107
102
- 50 - 25 0
25 50 75 100 125 150
T_J - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
20
15
1.35
V_GS = 4.5 V, I_D = 6 A
10
0.9
5
0.45
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating
Document Number: 62815
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S13-0629-Rev. A, 25-Mar-13
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000