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SIB404DK Datasheet, PDF (5/9 Pages) Vishay Siliconix – N-Channel 12 V (D-S) MOSFET
New Product
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
25
15
20
12
15
9
10
Package Limited
6
5
3
0
0
0
25
50
75
100 125 150
25
TC - Case Temperature (°C)
Current Derating*
SiB404DK
Vishay Siliconix
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67099
S11-0236-Rev. A, 14-Feb-11
www.vishay.com
5