SIB404DK Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 12 V (D-S) MOSFET

New Product
SiB404DK
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
35
10
V_GS = 5 V thru 2 V
30
8
25
20
V_GS = 1.5 V
6
15
10
5
0
0.0
V_GS = 1 V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
4
T_C = 25 °C
T_C = 125 °C
2
T_C = - 55 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.06
0.05
V_GS = 1.2 V
0.04
0.03
0.02
0.01
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
5
10 15 20 25 30 35
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1200
1000
C_iss
800
600
400
C_oss
200
C_rss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
5
1.6
I_D = 9 A
4
V_DS = 3 V
3
V_DS = 6 V
2
V_DS = 9.6 V
1.4
V_GS = 4.5 V, 2.5 V, 1.8 V; I_D = 3 A
1.2
1.0
V_GS = 1.2 V, I_D = 0.5 A
1
0.8
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67099
S11-0236-Rev. A, 14-Feb-11
www.vishay.com
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