SIB404DK Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 12 V (D-S) MOSFET

New Product
SiB404DK
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
100
0.06
0.05
T_J = 150 °C
10
0.04
I_D = 3 A
T_J = 25 °C
1
0.03
T_J = 125 °C
0.02
0.01
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.7
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
0.6
15
0.5
0.4
10
I_D = 250 μA
0.3
5
0.2
0.1
- 50 - 25 0
25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
1000
0
0.001 0.01 0.1
1
10
100 1000
Pulse (s)
Single Pulse Power, Junction-to-Ambient
100 _{Limited by RDS(on)*}
10
100 μs
1
0.1 T_A = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1
BVDSS Limited
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 67099
S11-0236-Rev. A, 14-Feb-11