SIA936EDJ Datasheet, PDF (5/9 Pages) Vishay Siliconix – Dual N-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by R_DS(on)*
I_DM Limited
10 ^{ID(on) Limited}
100 µs
1
1 ms
0.1
T_A = 25 °C
10 ms
100 ms
10 s
1s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
15
8
SiA936EDJ
Vishay Siliconix
12
6
9
4
6
Package Limited
2
3
0
0
25
50
75
100 125 150
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
T_C - Case Temperature (°C)
Current Derating*
Power Derating






* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-2624-Rev. A, 23-Dec-13
5
Document Number: 62929
For technical questions, contact: [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000