SIA936EDJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
1.6
8
I_D = 6 A
1.4
V_DS = 10 V
6
1.2
V_DS = 5 V
V_DS = 16 V
4
1.0
I_D = 4 A
SiA936EDJ
Vishay Siliconix
V_GS = 4.5V, 3.7V
V_GS = 2.5 V
2
0.8
0
0
100
10
1
3
6
9
12
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
T_J = 25 °C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
0.08
I_D = 4 A
0.06
0.04
0.02
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.2
20
1.1
1.0
15
0.9
10
0.8
I_D = 250 μA
0.7
5
0.6
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
Pulse (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
S13-2624-Rev. A, 23-Dec-13
4
Document Number: 62929
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000