SIA936EDJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 20 V (D-S) MOSFET

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SiA936EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.00
10^-2
1.60
1.20
0.80
0.40
T_J = 25 °C
10^-3
10^-4
10^-5
10^-6
10^-7
10^-8
T_J = 150 °C
T_J = 25 °C
0.00
0
3
6
9
12
15
18
V_GS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10^-9
0
3
6
9
12
15
18
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
20
10
V_GS = 5 V thru 2.5 V
16
8
12
V_GS = 2 V
8
4
0
0.0
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.080
6
4
2
0
0.0
800
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.060
0.040
V_GS = 2.5 V
V_GS = 3.7 V
600
C_iss
400
0.020
V_GS = 4.5 V
0.000
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
200
C_rss
0
0
C_oss
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
S13-2624-Rev. A, 23-Dec-13
3
Document Number: 62929
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000