SIA445EDJ Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by R_DS(on)*
SiA445EDJ
Vishay Siliconix
10
100 µs
1
0.1
T_A = 25 °C
1 ms
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
30
25
20
15
Package Limited
10
5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
20
15
10
5
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63619
www.vishay.com
S11-2525-Rev. A, 26-Dec-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000