SIA445EDJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

New Product
SiA445EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
10^-3
10^-4
1.6
T_J = 25 °C
10^-5
1.2
10^-6
0.8
10^-7
0.4
10^-8
T_J = 150 °C
T_J = 25 °C
0
0 2 4 6 8 10 12 14 16
V_GS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10^-9
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
50
20
V_GS = 5 V thru 3 V
V_GS = 2.5 V
40
16
30
20
V_GS = 2 V
10
0
0
V_GS = 1.5 V
0.5
1
1.5
2
2.5
3
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
V_GS = 2.5 V
V_GS = 3.7 V
V_GS = 4.5 V
0.00
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
12
8
4
0
- 0.5
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0
0.5
1
1.5
2
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3200
2800
2400
C_iss
2000
1600
1200
800
400
C_rss
C_oss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 63619
www.vishay.com
S11-2525-Rev. A, 26-Dec-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000