SIA445EDJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

New Product
SiA445EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
I_D = 12 A
8
V_DS = 5 V
6
V_DS = 10 V
4
V_DS = 16 V
2
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
1.5
1.4
V_GS = 4.5 V, 3.7 V, I_D = 7 A
V_GS = 2.5 V, I_D = 5 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
T_J = 150 °C
10
T_J = 25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.06
0.05
I_D = 7 A
0.04
0.03
0.02
0.01
T_J = 125 °C
TJ = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.0
0.9
0.8
0.7
I_D = 250 μA
0.6
0.5
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
www.vishay.com
Document Number: 63619
4
S11-2525-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000