SIA400EDJ Datasheet, PDF (5/9 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
28
Limited by R_DS(on)*
10
21
100 μs
1 ms
1
10 ms
100 ms
0.1
1 s, 10 s
DC
T_C = 25 °C
Single Pulse
0.01
BVDSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
14
7
0
0
SiA400EDJ
Vishay Siliconix
Package Limited
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating**
25
2.0
20
1.5
15
1.0
10
0.5
5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power, Junction-to-Ambient
** The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67844
www.vishay.com
S11-1148-Rev. A, 13-Jun-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000