SIA400EDJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

SiA400EDJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
I_D = 11 A
8
V_DS = 15 V
6
V_DS = 7.5 V
4
V_DS = 24 V
2
1.8
I_D = 11 A
1.5
1.2
0.9
V_GS = 4.5 V
V_GS = 2.5 V
0
0
10
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
1
T_J = 25 °C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.030
0.024
0.018
0.012
I_D = 11 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
1
0.8
I_D = 250 μA
0.6
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.006
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
www.vishay.com
Document Number: 67844
4
S11-1148-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000