SIA400EDJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.020
0.015
T_J = 25 °C
10^-02
10^-04
0.010
0.005
10^-06
10^-08
SiA400EDJ
Vishay Siliconix
T_J = 150 °C
T_J = 25 °C
0.000
0
3
6
9
12
15
V_GS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
30
V_GS = 5 V thru 2.5 V
24
V_GS = 2 V
18
12
6
0
0
0.030
V_GS = 1.5 V
0.5
1
1.5
2
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.024
0.018
0.012
V_GS = 2.5 V
V_GS = 4.5 V
0.006
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10^-10
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10
8
6
T_C = 25 °C
4
2
0
0
1500
T_C = 125 °C
T_C = - 55 °C
0.5
1
1.5
2
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
C_iss
900
600
300
C_oss
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 67844
www.vishay.com
S11-1148-Rev. A, 13-Jun-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000